Damage Profile Modeling and Experiment of Silicon Carbide …
The damage of silicon carbide substrates by the helium focused ion beam (helium FIB) process at the micro-nano scale is investigated. At the energy of 10~35 and the dose of 0.03~0.075 /, the helium FIB experiment was carried out on the silicon carbide substrate, and the evolution law of the damage of the silicon carbide substrate with the process …
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