AGGLOMERATION OF COBALT SILICIDE FILMS Z.G. XIAO 1, G.A. ROZGONYI, C.A. CANOVAI 2, AND C.M. OSBURN '3 I N. C. State University, Dept. of Materials Science and Engineering, Raleigh, NC 27695 ... Co film thickness was investigated by TEM, XRD, and four-point-probe measurements. It was
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Undoped and Mn-doped Co3O4 films were deposited on heated glasses substrates (TS = 400°C) using a homemade pneumatic spray method (PSM). The solution concentration and deposition time are 0.1 M ...
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This happensbecause ofnano structurecrystal formationand low film strainrelated toNi - Co - Cr alloy thin films.When the concentration of cobalt …
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We report investigations of the optical band gap and the current conduction in cobalt-doped BiFeO3 (BFO)-based thin film devices. It is widely believed that oxygen vacancies play a significant role in determining the current conduction in these devices. As the doping concentration of cobalt increased from 0 mol% to 10 mol%, the optical …
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We report the synthesis of TiO2 and Cobalt doped TiO2 (CoT) thin films by sol–gel process and the influence of dopant incorporation onto the structural, optical and electrical properties of the host lattice is analysed. The XRD analysis shows the reduction of crystal size with increasing Co dopant concentration. FESEM analysis confirmed the …
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Manganese cobalt nickel oxide (MCNO) films were deposited by RF magnetron sputtering under different oxygen concentrations. Increasing the oxygen content in the deposition environment was advantageous for obtaining a smoother surface with dense islands coalescing together, and the grain sizes and surface roughness of …
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In the samples which were annealed at 440 the rate of silicide growth was retarded in the cobalt films with higher oxygen concentration. The thickness of the Co2Si film varies from 1035 A for the oxygen-free sample to 555 A for the 6 at.% sample (and 0 A for the 16 at.% sample); see Fig. 1 and Table I. The increase in oxygen concentration …
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The XRD analysis was used to investigate the crystal structure, lattice parameters and crystallite sizes of NiO and Co doped NiOthin films. Fig. 1 showed that XRD pattern of NiO and Co doped NiO thin films deposited at different cobalt doping concentrations at the substrate temperature of 370 °C.Allthepatternsexhibits …
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Scientific Reports - Influence of Co concentration on properties of NiO film by sparking under uniform magnetic field. ... 0.15 M and 0.2 M of cobalt acetate tetrahydrate (Co ...
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The grain structure of electrodeposited Cobalt is important to device electrical and reliability performance. This paper describes thermal annealing studies …
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Cobalt oxide thin films were prepared by using the dipping sol–gel process. The films were deposited onto glass slides, starting from methanolic solution of cobalt acetate Co(CH 3 COO) 2 · 4H 2 O. The effects of film thickness and sol concentration on structural and optical properties were studied.
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Cobalt is a natural element found throughout the environment; the general population may be exposed to cobalt in the air, drinking water, and food. (1,5) The average concentration of cobalt in ambient air in the United States is approximately 0.0004 micrograms per cubic meter (µg/m 3). However, higher levels have been detected; in one ...
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Deposition, oxidation, and wetting of cobalt films on Au(111) Co2p XP spectra from a 1 MLE Co film on Au(111) before and after oxidation are shown in Fig. 1a.The bottom spectrum (black trace ...
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Cobalt oxide is one of the interesting materials in thin film electronics and optoelectronic applications [8] due to its ability to be deposited on large areas using …
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The development of novel cathodic materials with tailored nanostructures is crucial for the advancement of electrochromic devices. In this study, we synthesized cobalt-doped titanium dioxide (Ti-Co) thin films using a facile hydrothermal method to investigate the effects of cobalt doping on their structural, morphological, and electrochromic …
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The almost constant cobalt concentration profiles in Fig. 2 point to stoichiometric silicide formation. The interdiffused atoms across the interface do actually form a compound, as shown by XRD patterns in Fig. 3 a. The spectrum of as deposited film shows two reflexes corresponding to Co as well as a very intense peak centered at 2θ ≈ …
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Additionally, cobalt metallic center in CoN 4 can offer more active sites of faradic reaction and facilitate the charge transfer for CoN 4 -PPy thin film electrode 65, 66.
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This report reviews the state-of-the art chemistry and deposition techniques for cobalt thin films, highlighting innovations in cobalt metal-organic chemical vapor deposition (MOCVD), plasma and thermal atomic layer deposition (ALD), as well as …
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Saccharin was added to the cobalt solution at three different concentrations: 10 g/l, 20 g/l and 50 g/l. The additive caused a morphological, microstructural and magnetic behaviour change in cobalt films. The levelling and brightening effect of saccharin was verified visually and by atomic force microscope.
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In sulfide-free solutions, the steady-state potentials (E st are reached from negative values indicating oxide film thickening. Lower concentrations of S 2- ions enhance oxide film thickening and ...
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The effects of cobalt (Co)-doping (0 at%, 2 at%, 4 at%, 6 at%, and 10 at%) on the structural, morphological, electrical, and optical characteristics of spray-deposited nanostructured copper oxide (CuO) thin films were investigated. X-ray diffraction patterns revealed that the crystallite size is subject to a constant reduction with an increase in the …
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Fig. 8 presents the X-ray diffraction (XRD) analysis of Zn x Co 1 − x S thin films with varying concentrations of zinc and cobalt. The XRD data for Sample D indicates that the films exhibit a polycrystalline structure, with prominent peaks observed at 2θ values of 7.20°, 12.48°, 20.10°, 38.00°, and 58.02°.
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The deposition conditions of electroless deposition of cobalt films were investigated in more detail by means of electrochemical quartz crystal microgravimetry (EQCM). The effects of pH, temperature and concentration of the reactants on the deposition rate of cobalt films have been determined.
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Undoped and cobalt doped nickel oxide thin films (Co:NiO) at different doping concentrations were deposited on a glass substrate at constant substrate temperature by spray pyrolysis. The doping percentage increased from 0 to 10% and the effects of doping content on structural, morphological and optical properties were …
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The sputtered Co film, on the other hand, shows a high concentration of oxygen and a low concentration of carbon, as shown in Fig. 4b. These high and low …
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In this study, WO3:Co thin films with different percentages of cobalt concentration were deposited by spray pyrolysis on glass substrates at T = 400 °C and annealed at T = 500 °C for 1 h in the furnace. Tungsten oxide thin films with cobalt impurity are deposited by adding the cobalt chloride with different percentages of …
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Nickel substituted cobalt ferrite nanoparticles with composition Co1−xNixFe2O4 (0.0 ≤ x ≤ 1.0) was synthesized using simple, low temperature auto combustion met ... 1 Thick and Thin Film Device Laboratory, Department of Physics, Shivaji University, Kolhapur-416004 . ... They found that as the concentration of Ni into CoFe 2 …
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Cobalt is a high-potential material applicable as liner and seed replacement in BEoL metallization schemes. To enable seedless plating, the resistivity of thin cobalt liners (<5 nm) has to be controlled.In the presented paper, the impacts of impurities, grain boundary scattering, surface scattering and roughness on the resistivity of thin cobalt …
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Williamson-Hall plot analysis reveals that the Co3O4 film prepared using cobalt chloride is of crystallite size 28.59 nm and undergoes tensile strain, while the film prepared using cobalt nitrate ...
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